Valence electron structure of gp zone and interface energy in al - ag alloy 区的价电子结构与界面能
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The anchoring energy is the anisotropic part of interface energy 其中界面能的各向异性部分就是锚定能。
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Gas - liquid interface energy 气液表面能
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( 1 ) the microscopic theory of anchoring energy for nlc the interface energy aroused when lc is in contact with the solid can be seems as the sum of interaction potential energy between lc molecules and substrate surface molecules 内容分为两个部分: ( 1 )向列液晶界面锚定能的微观理论认为液晶与固体接触引起的界面能,是液晶分子与基板表面分子之间相互作用势能之和。
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It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb . so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation 本文在分析界面能的基础上,推导了在一定条件下薄膜受掺tb影响的钙钛矿相析晶含量的理论表达式为: y 1 yxp ( k ; xxp ( kcos ( s ? ( x a ) ’ )该式表明了受体系成核界面能的变化影响,晶体生长受掺tb浓度影响出现极值。